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2008-02-11 rev. 2.5 page 1 spw32n50c3 cool mos? power transistor v ds @ t jmax 560 v r ds(on) 0.11 ? i d 32 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitances ? improved transconductance p g -to247 type package ordering code spw32n50c3 p g -to247 q67040-s4613 marking 32n50c3 maximum ratings parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 32 20 a pulsed drain current, t p limited by t j max i d p uls 96 avalanche energy, single pulse i d = 10 a, v dd = 50 v e as 1100 mj avalanche energy, repetitive t ar limited by t jmax 1 ) i d = 20 a, v dd = 50 v e ar 1 avalanche current, repetitive t ar limited by t j max i ar 20 a gate source voltage v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t c = 25c p tot 284 w operating and storage temperature t j , t st g -55... +150 c reverse diode dv/dt dv/dt 15 v/ns 4) please note the new package dimensions arccording to pcn 2009-134-a
rev. 2.5 page 2 2008-02-11 spw32n50c3 maximum ratings parameter symbol value unit drain source voltage slope v ds = 400 v, i d = 32 a, t j = 125 c d v /d t 50 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 0.44 k/w thermal resistance, junction - ambient, leaded r thja - - 62 soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s t sold - - 260 c electrical characteristics, at t j=25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 500 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =20a - 600 - gate threshold voltage v gs ( th ) i d =1800 ? , v gs = v d s 2.1 3 3.9 zero gate voltage drain current i dss v ds =500v, v gs =0v, t j =25c, t j =150c - - 0.5 - 25 250 a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =20a, t j =25c t j =150c - - 0.09 0.27 0.11 - ? gate input resistance r g f =1mhz, open drain - 0.8 - please note the new package dimensions arccording to pcn 2009-134-a
rev. 2.5 page 3 2008-02-11 spw32n50c3 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. transconductance g fs v ds 2* i d * r ds(on)max , i d =20a - 30 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 4200 - pf output capacitance c oss - 1700 - reverse transfer capacitance c rss - 90 - effective output capacitance, 2) energy related c o(er) v gs =0v, v ds =0v to 400v - 181 - pf effective output capacitance, 3) time related c o(tr) - 350 - turn-on delay time t d(on) v dd =380v, v gs =0/10v, i d =32a, r g =2.7 ? - 20 - ns rise time t r - 30 - turn-off delay time t d(off) - 100 - fall time t f - 10 - gate charge characteristics gate to source charge q gs v dd =380v, i d =32a - 15 - nc gate to drain charge q gd - 90 - gate charge total q g v dd =380v, i d =32a, v gs =0 to 10v - 170 - gate plateau voltage v (plateau) v dd =380v, i d =32a - 5 - v 1 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 2 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 3 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . 4 i sd <=i d , di/dt<=200a/us, v dclink =400v, v peak rev. 2.5 page 4 2008-02-11 spw32n50c3 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 32 a inverse diode direct current, pulsed i sm - - 96 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =380v, i f = i s , d i f /d t =100a/s - 500 - ns reverse recovery charge q rr - 15 - c peak reverse recovery current i rrm - 60 - a peak rate of fall of reverse recovery current di rr / dt - 1000 - a/s typical transient thermal characteristics symbol value unit symbol value unit typ. typ. thermal resistance r th1 0.004367 k/w r th2 0.008742 r th3 0.017 r th4 0.081 r th5 0.103 r th6 0.049 thermal capacitance c th1 0.0006644 ws/k c th2 0.002479 c th3 0.00336 c th4 0.009048 c th5 0.017 c th6 0.114 external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t) please note the new package dimensions arccording to pcn 2009-134-a
rev. 2.5 page 5 2008-02-11 spw32n50c3 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 40 80 120 160 200 240 w 320 spw32n50c3 p tot 2 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 3 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s t p -4 10 -3 10 -2 10 -1 10 0 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 4 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 20 40 60 80 100 a 140 i d vgs = 4.5v vgs = 5v vgs = 5.5v vgs = 6v vgs = 7v vgs = 20v please note the new package dimensions arccording to pcn 2009-134-a
rev. 2.5 page 6 2008-02-11 spw32n50c3 5 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 20 40 a 80 i d vgs = 4v vgs = 4.5v vgs = 5v vgs = 5.5v vgs = 6v vgs = 20v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 10 20 30 40 50 60 i d 80 i d 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 ? 2 r ds(on) vgs = 4v vgs = 5.5v vgs = 4.5v vgs = 5v vgs = 2 0 7 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 20 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 ? 0.65 spw32n50c3 r ds(on) typ 98% 8 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 1 2 3 4 5 6 7 8 v 10 v gs 0 20 40 60 80 100 120 a 160 i d tj = 25c tj =150c please note the new package dimensions arccording to pcn 2009-134-a
rev. 2.5 page 7 2008-02-11 spw32n50c3 9 typ. gate charge v gs = f ( q gate ) parameter: i d = 32 a pulsed 0 40 80 120 160 200 nc 260 q gate 0 2 4 6 8 10 12 v 16 spw32n50c3 v gs 0.2 v ds max 0.8 v ds max 10 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a spw32n50c3 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 11 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 5 10 a 20 i ar tj(start)=25c tj(start)=125c 12 avalanche energy e as = f ( t j ) par.: i d = 10 a, v dd = 50 v 20 40 60 80 100 120 c 160 t j 0 0.2 0.4 0.6 0.8 mj 1.2 e as please note the new package dimensions arccording to pcn 2009-134-a
rev. 2.5 page 8 2008-02-11 spw32n50c3 13 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 450 460 470 480 490 500 510 520 530 540 550 560 570 v 600 spw32n50c3 v (br)dss 14 avalanche power losses p ar = f ( f ) parameter: e ar =1mj 10 4 10 5 10 6 hz f 0 200 400 600 w 1000 p ar 15 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 v 500 v ds 0 10 1 10 2 10 3 10 4 10 5 10 pf c ciss crss coss 16 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 v 500 v ds 0 2 4 6 8 10 12 14 16 18 j 22 e oss please note the new package dimensions arccording to pcn 2009-134-a
rev. 2.5 page 9 2008-02-11 spw32n50c3 definition of diodes switching characteristics please note the new package dimensions arccording to pcn 2009-134-a
80211 rev. 2.5 pdjh 63:31& 3 g 72 please note the new package dimensions arccording to pcn 2009-134-a
rev. 2.5 page 11 2008-02-11 63:31& published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hi nts given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, deliver y terms and conditions and prices, please contact the nearest infi neon technologies office ( www.infineon.com ). warnings due to technical requirements, component s may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components ma y be used in life-support devices or systems only with the express written approva l of infineon technologies, if a failure of such components can reasonably be expected to cause the failur e of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect hum an life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. please note the new package dimensions arccording to pcn 2009-134-a
data sheet erratum pcn 2009-134-a new package outlines to-247 final data sheet erratum rev. 2.0, 2010-02-01 1 new package outlines to-247 assembly capacity extension for coolmostm technology products assembled in lead-free package pg-to247-3 at subcon tractor ase (weihai) inc., chin a (changes are marked in blue . ) figure 1 outlines to-247, dimensions in mm/inches

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